1/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a 4v drive nch+pch mosfet SH8M4 ? structure ? dimensions (unit : mm) silicon n-channel / p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application power switching, dc / dc converter. ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) SH8M4 tb 2500 type ? absolute maximum ratings (ta=25 ? c) parameter v v dss symbol 30 v v gss a i d a i dp a i s a i sp w p d c tch c tstg nchannel pchannel limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed 20 9.0 36 1.6 36 2 150 ? 55 to + 150 ? 30 20 7.0 28 ? 1.6 ? 28 ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 ? thermal resistance c / w rth (ch-a) 62.5 parameter symbol limits unit c hannel to ambient ? ? mounted on a ceramic board. each lead has same dimensions sop8 ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1) tr1 (nch) source (2) tr1 (nch) gate (3) tr2 (pch) source (4) tr2 (pch) gate (5) tr2 (pch) drain (6) tr2 (pch) drain (7) tr1 (nch) drain (8) tr1 (nch) drain (1) (2) (3) (4) (8) (7) (6) (5) ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode free datasheet http:///
2/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M4 n-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 20v, v ds = 0v v dd 15v 30 ?? vi d = 1ma, v gs = 0v ?? 1 av ds = 30v, v gs = 0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 12 18 i d = 9.0a, v gs = 10v ? 16 24 m i d = 9.0a, v gs = 4.5v ? 17 25 i d = 9.0a, v gs = 4v 7.0 ?? si d = 9.0a, v ds = 10v ? 1190 ? pf v ds = 10v ? 340 190 ? pf v gs = 0v ? 10 ? pf f = 1mhz v gs = 10v r l = 3.33 r g = 10 ? 15 ? ns ? 55 ? ns ? 22 ? ns ? 15 ? ns ? 3.0 ? nc ? 6.1 ? nc v gs = 5v ?? nc i d = 9.0a i d = 4.5a, v dd 15v ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.2 v i s = 6.4a, v gs = 0v parameter symbol min. typ. max. unit conditions ? forward voltage ? pulsed
3/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M4 p-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 a ? 30 ?? v ??? 1 a ? 1.0 ?? 2.5 v ? 20 28 ? 25 35 m ? 30 42 6.0 ?? s ? 2600 ? pf ? 450 350 ? pf ? 20 ? pf ? 50 ? ns ? 110 ? ns ? 70 ? ns ? 25 ? ns ? 5.5 ? nc ? 10 ? nc ?? nc v gs = 20v, v ds = 0v v dd ? 15v i d = ? 1ma, v gs = 0v v ds = ? 30v, v gs = 0v v ds = ? 10v, i d = ? 1ma i d = ? 7.0a, v gs = ? 10v i d = ? 3.5a, v gs = ? 4.5v i d = ? 3.5a, v gs = ? 4.0v i d = ? 3.5a, v ds = ? 10v v ds = ? 10v v gs = 0v f = 1mhz v gs = ? 10v r l = 4.29 r g = 10 v gs = ? 5v i d = ? 7.0a i d = ? 3.5a, v dd ? 15v ? body diode characteristics (source-drain) (ta=25 ? c) v sd ??? 1.2 v i s = ? 1.6a, v gs = 0v parameter symbol min. typ. max. unit conditions forward voltage
4/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M4 n-ch ? electrical characteristic curves 10 100 1000 10000 0.01 0.1 1 10 10 0 drain-source voltage : v ds (v) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 1 0 drain current : i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta = 25 c v dd = 15v v gs = 10v r g = 10 pulsed fig.2 switching characteristics t r t f t d (off) t d (on) 0 5 10 15 20 25 3 0 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 9 10 gate-source voltage : v gs (v) ta = 25 c v dd = 15v i d = 9a r g = 10 pulsed fig.3 dynamic input characteristic s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 .0 0.001 0.01 0.1 1 10 gate-source voltage : v gs (v) drain current : i d (a) fig.4 typical transfer characteristics ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = 10v pulsed 024681012141 6 gate-source voltage : v gs (v) 0 50 100 150 200 static drain-source on-state resistance : r ds (on) ( m ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 9a i d = 4.5a 0.01 0.1 1 10 0.0 0.5 1.0 1 .5 source-drain voltage : v sd (v) source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.1 1 1 0 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) fig.7 static drain-source on-state resistance vs. drain current ( ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed 0.1 1 1 0 drain current : i d (a) 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4.5v pulsed static drain-source on-state resistance : r ds (on) ( m ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) 0.1 1 1 0 v gs = 4v pulsed 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ) fig.9 static drain-source on-state resistance vs. drain current ( ?? )
5/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M4 p-ch ? electrical characteristic curves fig.1 typical capacitance vs. drain-source voltage 0.01 0.1 1 10 10 0 drain-source voltage : ? v ds (v) capacitance : c (pf) 1000 10000 100 ta = 25 c f = 1mhz v gs = 0v c iss c oss c rss fig.2 switching characteristics 0.01 0.1 1 1 0 drain current : ? i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta = 25 c v dd = ? 15v v gs = ? 10v r g = 10 pulsed t d (off) t d (on) t r t f fig.3 dynamic input characteristics ta = 25 c v dd = ? 15v i d = ? 7a r g = 10 pulsed 0 5 10 15 20 25 3 0 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : ? v gs (v) fig.4 typical transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 .0 gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 10 drain current : ? i d (a) v ds = ? 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 024681012141 6 gate-source voltage : ? v gs (v) 0 50 100 150 200 static drain-source on-state resistance : r ds (on) ( m ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d =? 7.0a i d =? 3.5a fig.6 source current vs. source-drain voltage 0.0 0.5 1.0 1 .5 source-drain voltage : ? v sd (v) 0.01 0.1 1 10 source current : ? i s (a) v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = ? 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ) 0.1 1 1 0 1 10 100 fig.8 static drain-source on-state resistance vs. drain current ( ? ) 0.1 1 1 0 10 100 1000 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ) v gs = ? 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c fig.9 static drain-source on-state resistance vs. drain current ( ?? ) 0.1 1 1 0 10 100 1000 v gs = ? 4v pulsed drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
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